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场发射高分辨透射电子显微镜

作者:        发布于:2010-09-11

  

    号:JEM-2100F STEM/EDS 

  生产国别、公司:日本,JEOL

  主要技术指标:

    TEM 力:0.23nm(点),0.102nm(晶格)

    STEM力:0.20nm(晶格)

    最小束斑尺寸:0.5nm

    放大倍数:50~1100万倍

    加速电压:160 200kV

    EDS X射线能量分辩力:132eV

    元素分析范围:BU

    分析感量:10-1410-21g

  主要应用于材料的形貌、内部组织结构和晶体缺陷的观察;物相鉴定,包括晶胞参数的电子衍射测定;高分辨晶格和结构像观察;纳米微粒和微区的形态、大小及化学成分的点、线和面元素定性定量和分布分析。样品要求为非磁性的稳定的薄膜或粉末,视其分析内容进行样品制备。

  

  Model: JEM 2100F STEM/EDS

  Manufacturer: JEOL, Japan

  Main Specifications

    TEM Point Resolution0.23nm Lattice Resolution: 0.102nm

    Lattice Resolution on STEM Image: 0.20nm

  Minimum spot size: 0.5nm

  Accelerating Voltage:160-200 kV

  Magnification: 50~1100k

  X ray Energy Resulotion on EDS: 132eV

  Scope of analytical elements: B ~U 

  Sensitivty: 10-1410-21g

  The analytic system has the advantage of undertaking at the same time synthetic analyses for material topography, microstructure and elements. It is applied mostly to the observation to the morphology or tissue structure of materials and crystal defects; phase identification including the measurements of lattice parameters by ED and Lattice image and atomic structure image; the investigation of size of nano-particles, and the qualitative or quantitative analyses to point , line and mapping of components at the analysis microarea.

  

  

  测试人员:

   孙振亚,男,19647月生于安徽怀宁,研究员,硕士生导师。全国微束分析标准化技术委员会委员,中国岩石矿物地球化学学会微束分析专委会副主任,中国岩石矿物地球化学学会环境矿物学专委会委员,湖北省电子显微镜学会理事。

  联系电话:027-87651843-8110

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